The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Nov. 20, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Daniel J. Hubbard, Boise, ID (US);

Roy Leonard, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 12/0846 (2016.01); G06F 12/0882 (2016.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/0604 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01); G06F 12/0851 (2013.01); G06F 12/0882 (2013.01);
Abstract

A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including initiating a write operation to write data to a first multiple level cell (XLC) storage including a first XLC block and a second XLC storage including a second XLC block, and causing a first portion of the data to be written to a first number of pages of the first XLC block and a second portion of the data to be written to a second number of pages of the second XLC block using page level interleave. The first number of pages and the second number of pages are defined by an interleave mix including an interleave ratio between a first XLC write mode and a second XLC write mode.


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