The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Aug. 13, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Oliver Nagler, Munich, DE;

Marianne Unterreitmeier, Woerth, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 29/04 (2006.01); H01L 21/66 (2006.01); G01N 29/12 (2006.01);
U.S. Cl.
CPC ...
G01N 29/045 (2013.01); H01L 22/12 (2013.01); G01N 29/12 (2013.01); G01N 2291/014 (2013.01); G01N 2291/023 (2013.01);
Abstract

A system and method for the acoustic detection of cracks in a semiconductor substrate is disclosed. In one example, the system includes a force generating unit configured to apply a force onto the semiconductor substrate, a detector unit comprising a resonating indenter and an acoustic emission sensor coupled to the resonating indenter, and an evaluation unit configured to evaluate acoustic signals detected by the detector unit and configured to determine whether a crack has occurred based on the detected signals. The resonating indenter is configured to contact the semiconductor substrate at a lateral distance from the force generating unit, and wherein the force generating unit and the resonating indenter are configured to contact the semiconductor substrate on the same side.


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