The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Oct. 13, 2022
Globalwafers Co., Ltd., Hsinchu, TW;
Chieh Hu, Chiayi, TW;
Hsien-Ta Tseng, Zhunan, TW;
Chun-Sheng Wu, Hsinchu, TW;
William Lynn Luter, St. Charles, MO (US);
Liang-Chin Chen, Zhubei, TW;
Sumeet Bhagavat, St. Charles, MO (US);
Carissima Marie Hudson, St. Charles, MO (US);
Yu-Chiao Wu, Frontenac, MO (US);
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.