The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Jun. 06, 2019
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Robert G. Ridgeway, Tempe, AZ (US);

Raymond N. Vrtis, Tempe, AZ (US);

Madhukar B. Rao, Tempe, AZ (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01); C23C 16/513 (2006.01);
U.S. Cl.
CPC ...
C23C 16/325 (2013.01); C23C 16/36 (2013.01); C23C 16/513 (2013.01); C23C 16/45553 (2013.01);
Abstract

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound comprising a carbon-carbon double or carbon-carbon triple bond. The plasma source employed comprises both a remote plasma source and an in-situ plasma source operating in combination.


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