The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Oct. 13, 2022
Taiwan-asia Semiconductor Corporation, Hsinchu, TW;
Di-Bao Wang, Hsinchu, TW;
Chun-Chieh Lin, Hsinchu, TW;
TAIWAN-ASIA SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
The invention provides a silicide capacitive micro electromechanical structure and fabrication method thereof, comprising a substrate, a passivation layer, a silicon layer, a first metal layer, and a dielectric layer. The passivation layer is formed on the substrate; the silicon layer and the first metal layer are formed on the passivation layer. The first metal layer includes a contact part and a conductive part. The contact parts contact at least a part of the silicon layer, and the conductive portion extends away from the silicon layer to electrically connect an external circuit. The dielectric layer is formed on the passivation layer, and at least the silicon layer and the first metal layer are covered by the dielectric layer. After an annealing process is performed, the conductive portion remains in contact with the silicon layer after the silicidation reaction to maintain an electrical connection with the external circuit.