The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Nov. 27, 2023
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Kamal M. Karda, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); G11C 5/12 (2006.01); G11C 13/00 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
H10B 63/84 (2023.02); G11C 5/12 (2013.01); G11C 13/0002 (2013.01); H01L 21/823487 (2013.01); H01L 27/1225 (2013.01); H01L 29/4908 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/7827 (2013.01); H01L 29/78642 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10B 63/22 (2023.02); H10B 63/24 (2023.02); H10B 63/34 (2023.02); H10N 70/011 (2023.02); H10N 70/245 (2023.02); H10N 70/828 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02); G11C 11/1659 (2013.01); G11C 11/2259 (2013.01); G11C 11/401 (2013.01); G11C 13/003 (2013.01); G11C 2213/79 (2013.01); H01L 29/78618 (2013.01);
Abstract
Semiconductor devices are disclosed. A semiconductor device may include a hybrid transistor configured in a vertical orientation. The hybrid transistor may include a gate electrode, a drain material, a source material, and a channel material operatively coupled between the drain material and the source material. The source material and the drain material include a first material and the channel material includes a second, different material.