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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12219765 B1

PDFFull Text
Date of Patent:
Feb. 04, 2025

Filed:

Jun. 13, 2023

Three dimensional memory and methods of forming the same

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sanh D. Tang, Boise, ID (US);

John K. Zahurak, Eagle, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Schwegman Lundberg & Woessner, P.A.

Primary Examiner:

Dale E Page

Assistant Examiner:

Wilner Jean Baptiste

Int. Cl.
CPC ...
H01L 27/06 (2006.01); G11C 13/00 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 41/10 (2023.01); H10B 41/20 (2023.01); H10B 41/27 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 43/50 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 21/76838 (2013.01); H01L 23/528 (2013.01); H01L 27/0688 (2013.01); H01L 29/40114 (2019.08); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H10B 41/10 (2023.02); H10B 41/20 (2023.02); H10B 41/27 (2023.02); H10B 41/50 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 43/50 (2023.02); H10B 63/34 (2023.02); H10B 63/845 (2023.02); G11C 2213/71 (2013.01); H10N 70/231 (2023.02);
Abstract

Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.

Find Patent Forward Citations

Tang, Sanh. (2025). Three dimensional memory and methods of forming the same (U.S. Patent No. 12219765). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12219765

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