Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof

Abstract

A memory device includes at least one instance of a unit layer stack including a source layer, a channel-containing layer that contains a semiconductor channel, and a drain layer that are stacked along a vertical direction over a substrate; a memory opening vertically extending through the at least one instance of the unit layer stack; and a memory opening fill structure located in the memory opening and including a control gate electrode and a memory film in contact with each instance of the semiconductor channel. The memory film includes a resonant tunneling barrier stack, a barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the barrier layer.