The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Apr. 25, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Jingwen Lu, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); H01L 21/31111 (2013.01); H01L 23/528 (2013.01); H10B 12/05 (2023.02); H10B 12/053 (2023.02);
Abstract

Embodiments of the present application relate to the field of semiconductors, and provide a manufacturing method of a semiconductor structure and a structure thereof. The method of manufacturing a semiconductor structure includes: providing a substrate, active regions and an isolation structure; patterning the active regions and the isolation structure to form a word line trench, sidewalls of the word line trench exposing the active regions and the isolation structure; performing corner rounding at least once on the active regions and the isolation structure exposed by the sidewalls of the word line trench, such that a first height difference is formed between remaining active regions and the isolation structure, wherein the corner rounding includes: etching the isolation structure exposed by the sidewalls of the word line trench, such that a first thickness of the active regions are exposed by the isolation structure.


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