The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Oct. 27, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Scott E. Sills, Boise, ID (US);
Ramanathan Gandhi, Singapore, SG;
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Yi Fang Lee, Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/1054 (2013.01); H01L 29/66969 (2013.01); H10B 63/34 (2023.02);
Abstract
A transistor comprises a first conductive contact, a heterogeneous channel comprising at least one oxide semiconductor material over the first conductive contact, a second conductive contact over the heterogeneous channel, and a gate electrode laterally neighboring the heterogeneous channel. A device, a method of forming a device, a memory device, and an electronic system are also described.