The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Feb. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Chiung Tu, Hsinchu, TW;

Hsiang-Ku Shen, Hsinchu, TW;

Yuan-Yang Hsiao, Hsinchu, TW;

Tsung-Chieh Hsiao, Changhua County, TW;

Chen-Chiu Huang, Hsinchu, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 27/0688 (2013.01);
Abstract

A device structure according to the present disclosure includes a metal-insulator-metal (MIM) stack that includes a plurality of conductor plate layers interleaved by a plurality of insulator layers. The MIM stack includes a first region and a second region and the first region and the second region overlaps in a third region. The MIM stack further includes a first via passing through the first region and electrically coupled to a first subset of the plurality of conductor plate layers, a second via passing through the second region and electrically coupled to a second subset of the plurality of conductor plate layers, and a ground via passing through the third region and electrically coupled to a third subset of the plurality of conductor plate layers.


Find Patent Forward Citations

Loading…