The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jul. 11, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Cheng Ching, Hsinchu County, TW;
Ching-Wei Tsai, Hsinchu, TW;
Kuan-Lun Cheng, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor fin, a gate structure, source/drain structures, and a contact structure. The semiconductor fin extends from a substrate. The gate structure extends across the semiconductor fin. The source/drain structures are on opposite sides of the gate structure. The contact structure is over a first one of the source/drain structures. The contact structure includes a semiconductor contact and a metal contact over the semiconductor contact. The semiconductor contact has a higher dopant concentration than the first one of the source/drain structures. The first one of the source/drain structures includes a first portion and a second portion at opposite sides of the fin and interfacing the semiconductor contact.