The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Apr. 08, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yongbum Kwon, Yongin-si, KR;

Unbyoung Kang, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/76802 (2013.01); H01L 21/76898 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/033 (2013.01); H01L 2224/0355 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01);
Abstract

A method of manufacturing a semiconductor package includes bonding first the and second structures, such that a first bonding structure is directly bonded to a second bonding structure. The forming of the first structure includes; forming a blocking layer on a metallic material layer including a first portion covering a concaved portion of the metallic material layer and a second portion covering a non-concaved portion of the metallic material layer, performing a first planarization process to remove the second portion of the blocking layer while the first portion of the blocking layer remains, performing a second planarization process to remove the non-concaved portion of the metallic material layer and expose the barrier layer on the insulating layer, performing a wet etching process to remove the barrier layer on the insulating layer and the blocking layer to form the first bonding pad including the barrier layer in the opening and the metallic material layer and forming a recessed portion below an upper surface of the metallic material layer on the barrier layer while removing the barrier layer on the insulating layer.


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