The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Jan. 25, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Luguang Wang, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01);
Abstract

A semiconductor structure includes: a substrate and a dielectric layer, in which the substrate has a front surface and a back surface which are oppositely arranged, and the dielectric layer is formed on the front surface; a connecting hole, penetrating through the substrate and extending to the dielectric layer; an insulating layer, located on the surface of the inner wall of the connecting hole; and a connecting structure, comprising a first barrier layer, a second barrier layer and a conductive structure, in which the first barrier layer is located on a surface of the insulating layer, the second barrier layer is located between the first barrier layer and the conductive structure, and an air gap exists between the second barrier layer and the first barrier layer.


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