Memory systems, operation methods thereof, and electronic devices

Abstract

In one example, the memory system includes a memory coupled to a memory controller; the memory includes a plurality of word lines and a plurality of multi-bit memory cells coupled to the plurality of word lines; the memory includes multiple types of pages, each corresponding to a one read voltage level. In one example, the operation method includes obtaining, when a read operation of the memory fails, a target read retry table from a set of read retry tables, the set of read retry tables comprises all read retry tables corresponding to the multiple types of pages; a read retry table corresponding to each type of page comprises a set of bias voltages corresponding to respective read voltage levels that are used to distinguish stored data of corresponding bit; obtaining read retry voltages through the target read retry table, and performing a read retry operation using the read retry voltages.