The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jan. 08, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Sanjay Subbarao, Irvine, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04L 1/00 (2006.01); G06F 11/07 (2006.01); G06F 11/10 (2006.01); G06F 11/14 (2006.01); H03M 13/00 (2006.01); H03M 13/11 (2006.01); H03M 13/13 (2006.01); H04L 1/18 (2023.01); H04L 1/1812 (2023.01); H04L 1/1867 (2023.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/0793 (2013.01); G06F 11/1435 (2013.01);
Abstract
Various embodiments provide block failure protection for a memory sub-system that supports zones, such a memory sub-system that uses a RAIN (redundant array of independent NAND-type flash memory devices) technique for data error-correction. For some embodiments, non-parity zones of a memory sub-system that are filling up at a similar rate are matched together, a parity is generated for stored data from across the matching zones, and the generated parity is stored in a parity zone of the memory device.