The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Mar. 22, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Satoshi Toda, Nirasaki, JP;

Tetsuro Takahashi, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); C23F 1/08 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45502 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/52 (2013.01); C23F 1/08 (2013.01); H01L 21/306 (2013.01); H01L 21/31111 (2013.01);
Abstract

A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A first mode is executed in which an HF gas and an NHgas are supplied to one of the two processing parts, and the HF gas is not supplied to the other of the two processing parts. Subsequently, a second mode is executed in which the HF gas and the NHgas are supplied to the two processing parts under the same gas conditions. In the first mode, a pressure difference is prevented from occurring between the two processing parts.


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