The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Jul. 05, 2023
Applicant:

United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;

Inventors:

Dejin Kong, Fujian, CN;

Jinjian Ouyang, Fujian, CN;

Xiang Bo Kong, Fujian, CN;

Wen Yi Tan, Fujian, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10B 63/80 (2023.02); H10N 70/021 (2023.02); H10N 70/066 (2023.02); H10N 70/068 (2023.02); H10N 70/8833 (2023.02);
Abstract

A resistive random access memory includes a first dielectric layer, a bottom electrode on the first dielectric layer, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, a top electrode on the variable-resistance layer and filling a recess in the variable-resistance layer, a second dielectric layer on the first dielectric layer and around the variable-resistance layer and the bottom electrode, and a spacer on the bottom electrode and inserting between the variable-resistance layer and the second dielectric layer.


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