The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Aug. 28, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chih-Wei Kuo, Tainan, TW;

Chung-Yi Chiu, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/10 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); H10N 70/011 (2023.02); H10N 70/231 (2023.02); H10B 63/10 (2023.02);
Abstract

A memory device includes a substrate, a memory unit disposed on the substrate, a first spacer layer, and a second spacer layer. The memory unit includes a first electrode, a second electrode disposed above the first electrode, and a memory material layer disposed between the first electrode and the second electrode. The first spacer layer is disposed on a sidewall of the memory unit and includes a first portion disposed on a sidewall of the first electrode, a second portion disposed on a sidewall of the second electrode, and a bottom portion. A thickness of the second portion is greater than that of the first portion. The second spacer layer is disposed on the first spacer layer. A material composition of the second spacer layer is different from that of the first spacer layer. The bottom portion is disposed between the substrate and the second spacer layer.


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