The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Sep. 21, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/023 (2023.02); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H10B 63/30 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02);
Abstract
A memory cell includes a bottom electrode, a first dielectric layer, a top electrode, and a variable resistance layer. The first dielectric layer laterally surrounds the bottom electrode. The top electrode is disposed over the bottom electrode and the first dielectric layer. The variable resistance layer is sandwiched between the bottom electrode and the top electrode and between the first dielectric layer and the top electrode. The variable resistance layer exhibits a T-shape in a cross-sectional view.