The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Oct. 11, 2022
Applicant:

Tagore Technology, Inc., Arlington Heights, IL (US);

Inventors:

Manish Shah, Vernon Hills, IL (US);

Rajesh Ghosh, Hooghly, IN;

Syed Asif Eqbal, Patna, IN;

Firdos Khan, Raniganj, IN;

Subhendu Rana, Purba Medinipur, IN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/14 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01);
Abstract

An electronic device includes a GaN power FET, a GaN driver coupled to the GaN power FET and a gate bias circuit coupled to the GaN driver. The GaN power FET and the GaN driver are monolithically integrated on a single GaN die. The gate bias circuit is predominately monolithically integrated on the single GaN die and includes only one active component external to the single GaN die. In one embodiment, the only active component external to the single GaN die is a linear regulator. In another embodiment, the only active component external to the single GaN die is a shunt regulator. In yet another embodiment, the only active component external to the single GaN die is a Zener diode.


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