The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Oct. 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Ya-Chin King, Taipei, TW;
Chrong Jung Lin, Hsinchu, TW;
Burn Jeng Lin, Hsinchu, TW;
Shi-Jiun Wang, Changhua, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.