The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Mar. 03, 2021
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventors:

Kai Cheng, Suzhou, CN;

Kai Liu, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/778 (2013.01);
Abstract

The present disclosure provides a semiconductor structure and a forming method thereof. The semiconductor structure includes: a substrate and an epitaxial layer disposed on the substrate. At least a part of the epitaxial layer is doped with metal atoms, and the doping concentration of the metal atoms at the bottom surface of the epitaxial layer near the substrate is larger than 1×10atoms/cm.


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