The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Dec. 08, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Luguang Wang, Hefei, CN;
Xiaoling Wang, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 23/3736 (2013.01); H01L 21/3083 (2013.01); H01L 21/76898 (2013.01);
Abstract
A semiconductor structure includes: a substrate; a through silicon via structure that is located in the substrate; a first heat dissipation layer that is around a side wall of the through silicon via structure, and a material of which is a metal semiconductor compound; and a second heat dissipation layer that is around the side wall of the through silicon via structure and located between the first heat dissipation layer and the through silicon via structure, and a heat conductivity of which is greater than a heat conductivity of the first heat dissipation layer.