The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

May. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chien-Hua Huang, Miaoli County, TW;

Tzu-Hui Wei, Zhubei, TW;

Cherng-Shiaw Tsai, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02321 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 21/02142 (2013.01); H01L 21/02145 (2013.01); H01L 21/02148 (2013.01); H01L 21/02153 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/823475 (2013.01);
Abstract

An example embodiment of the present disclosure involves a method for semiconductor device fabrication. The method comprises providing a structure that includes a conductive component and an interlayer dielectric (ILD) that includes silicon and surrounds the conductive component, and forming, over the conductive component and the ILD, an etch stop layer (ESL) that includes metal oxide. The ESL includes a first portion in contact with the conductive component and a second portion in contact with the ILD. The method further comprises baking the ESL to transform the metal oxide located in the second portion of the ESL into metal silicon oxide, and selectively etching the ESL so as to remove the first portion of the ESL but not the second portion of the ESL.


Find Patent Forward Citations

Loading…