The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Dec. 30, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Changhyun Lee, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01);
Abstract

A three-dimensional non-volatile memory includes memory blocks including layers. A data method for erasure verification of the three-dimensional non-volatile memory includes selecting a first layer from the layers on which an erase operation has been performed. The method also includes applying a first local verification voltage to a word line corresponding to the first layer to verify the erase operation on the first layer. When a full block erasure verification is performed on the memory blocks corresponding to the first layer, a voltage applied to the word line corresponding to the memory blocks is a global verification voltage, and the first local verification voltage is lower than the global verification voltage.


Find Patent Forward Citations

Lee, Changhyun. (2025). Data erasure verification for three-dimensional non-volatile memory (U.S. Patent No. 12211562). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12211562

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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