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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12211534 B1

PDFFull Text
Date of Patent:
Jan. 28, 2025

Filed:

Aug. 21, 2023

Semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Jun Koyama, Kanagawa, JP;

Kiyoshi Kato, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H01L 27/12 (2006.01); G11C 11/405 (2006.01); G11C 16/04 (2006.01); H01L 27/118 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H10B 41/20 (2023.01); H10B 41/70 (2023.01); H10B 69/00 (2023.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); G11C 11/405 (2013.01); G11C 16/0433 (2013.01); H01L 27/11803 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/16 (2013.01); H01L 29/24 (2013.01); H01L 29/247 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01); H10B 41/20 (2023.02); H10B 41/70 (2023.02); H10B 69/00 (2023.02); G11C 2211/4016 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 29/7833 (2013.01); H10B 12/00 (2023.02);
Abstract

An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

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Yamazaki, Shunpei. (2025). Semiconductor device (U.S. Patent No. 12211534). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12211534

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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