The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Jan. 28, 2020
Applicants:

National University Corporation Toyohashi University of Technology, Toyohashi, JP;

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Naohiro Hozumi, Toyohashi, JP;

Takuto Matsui, Toyohashi, JP;

Toru Matsumoto, Hamamatsu, JP;

Shigeru Eura, Hamamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 29/34 (2006.01); G01N 29/04 (2006.01); G01N 29/26 (2006.01); G01N 29/265 (2006.01); G01N 29/44 (2006.01); G01R 31/265 (2006.01); G01R 31/27 (2006.01); G01R 31/70 (2020.01);
U.S. Cl.
CPC ...
G01N 29/348 (2013.01); G01N 29/041 (2013.01); G01N 29/043 (2013.01); G01N 29/26 (2013.01); G01N 29/265 (2013.01); G01N 29/4463 (2013.01); G01R 31/265 (2013.01); G01R 31/275 (2013.01); G01R 31/70 (2020.01); G01N 2291/0231 (2013.01); G01N 2291/2697 (2013.01);
Abstract

An ultrasonic testing device having a packaged semiconductor device as a testing target, the device including: an ultrasonic oscillator disposed to face the semiconductor device; a pulse generator generating a driving signal that is used in the generation of an ultrasonic wave to be output from the ultrasonic oscillator; and an analysis unit analyzing an output signal that is output from the semiconductor device in accordance with the irradiation of the ultrasonic wave from the ultrasonic oscillator, in which the pulse generator sets an optimal frequency of the driving signal such that the absorption of the ultrasonic wave in the semiconductor device is maximized.


Find Patent Forward Citations

Loading…