The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Nov. 18, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Yiming Zhu, Hefei, CN;

Xiaoguang Wang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02);
Abstract

A semiconductor structure comprises: a substrate; a first transistor including a first gate located in the substrate and a first terminal located on a surface of the substrate, the first terminal being configured to be connected to a first-type memory cell; and a second transistor including a second gate located in the substrate and a second terminal located on the surface of the substrate, the second terminal being configured to be connected to a second-type memory cell, and a width of the second gate being less than a width of the first gate.


Find Patent Forward Citations

Quick Actions:

Zhu, Yiming. (2025). Semiconductor structure and formation method thereof (U.S. Patent No. 12207479). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12207479

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…