The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Feb. 12, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Vladimir Odnoblyudov, Eagle, ID (US);
Martin F. Schubert, Mountain View, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/12 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 21/02104 (2013.01); H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/08 (2013.01); H01L 33/12 (2013.01); H01L 33/38 (2013.01); H01L 33/483 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01);
Abstract
Various embodiments of SST dies and solid state lighting ('SSL') devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.