The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Mar. 14, 2022
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Jing-Da Li, Kaohsiung, TW;

Kai-Chuan Kan, Hsinchu, TW;

Chung-Ren Lao, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 29/0692 (2013.01); H01L 29/404 (2013.01);
Abstract

A diode structure includes a substrate having a first conductivity type, a first well region having a second conductivity type opposite to the first conductivity type and disposed in the substrate, a first doped region having the first conductivity type and disposed in the first well region, a ring-shaped well region having the second conductivity type, disposed in the first well region and surrounding the first doped region, an anode disposed on the first doped region, a second well region having the second conductivity type, separated from the first well region and disposed in the substrate, a second doped region having the second conductivity type and disposed in the second well region, and a cathode disposed on the second doped region.


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