The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Dec. 23, 2021
Applicant:
SK Keyfoundry Inc., Cheongju-si, KR;
Inventors:
Yang Beom Kang, Cheongju-si, KR;
Sang Uk Lee, Cheongju-si, KR;
Assignee:
SK keyfoundry Inc., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); G03F 1/36 (2012.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); G03F 1/36 (2013.01); H01L 27/092 (2013.01); H01L 29/7817 (2013.01);
Abstract
A deep trench layout implementation for a semiconductor device is provided. The semiconductor device includes an isolation film with a shallow depth, an active area, and a gate electrode formed in a substrate; a deep trench isolation surrounding the gate electrode and having one or more trench corners; and a gap-fill insulating film formed inside the deep trench isolation. The one or more trench corners is formed in a slanted shape from a top view.
Quick Actions:
Kang, Yang. (2025). Semiconductor device with deep trench isolation mask layout (U.S. Patent No. 12206002). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12206002
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile