The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Sep. 20, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Ruei Jhan, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu, TW;
Kuan-Lun Cheng, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A device includes a substrate, a first stack of semiconductor nanostructures vertically overlying the substrate, and a gate structure surrounding the semiconductor nanostructures and abutting an upper side and first and second lateral sides of the first stack. A first epitaxial region laterally abuts a third lateral side of the first stack, and a second epitaxial region laterally abuts a fourth lateral side of the first stack. A first inactive fin laterally abuts the first epitaxial region, and a second inactive fin laterally abuts the second epitaxial region and is physically separated from the first inactive fin by the gate structure.