The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Apr. 25, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Da-Jun Lin, Kaohsiung, TW;

Bin-Siang Tsai, Changhua County, TW;

Fu-Yu Tsai, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45464 (2013.01);
Abstract

A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.


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