The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Mar. 30, 2022
Applicant:
Kemet Electronics Corporation, Fort Lauderdale, FL (US);
Inventors:
Yaru Shi, Simpsonville, SC (US);
Antony P. Chacko, Simpsonville, SC (US);
Ajaykumar Bunha, Simpsonville, SC (US);
Assignee:
KEMET Electronics Corporation, Fort Lauderdale, FL (US);
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/15 (2006.01); H01G 9/00 (2006.01); H01G 9/028 (2006.01); H01G 9/048 (2006.01); H01G 9/04 (2006.01);
U.S. Cl.
CPC ...
H01G 9/15 (2013.01); H01G 9/0032 (2013.01); H01G 9/028 (2013.01); H01G 9/048 (2013.01); H01G 2009/05 (2013.01);
Abstract
Provided herein is a method for forming a capacitor and an improved capacitor formed by the method. The method comprises providing an anode with an anode lead extending therefrom. A dielectric is formed on the anode thereby forming an anodized anode. A cathode layer is formed over the dielectric wherein the cathode layer is formed by applying a conductive polymer solution or dispersion and applying a primer solution or dispersion comprising a monophosphonium or monosulfonium cation.