The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Apr. 05, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Xiaoyu Che, San Jose, CA (US);

Yanjie Wang, San Jose, CA (US);

Guirong Liang, Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); G11C 11/5628 (2013.01); G11C 11/5671 (2013.01);
Abstract

The memory device includes a plurality of memory cells that are arranged in a plurality of word lines. A controller is provided, and the controller is configured to program the memory cells to respective threshold voltages in a programming operation. The controller is configured to, in the programming operation, apply a first voltage to a control gate of a selected word line of the plurality of word lines. The controller is also configured to continuously ramp a voltage applied to the control gate of the selected word line from the first voltage to a programming voltage over a first duration. The controller is further configured to hold the voltage applied to the control gate of the selected word line at the programming voltage over a second duration that is less than the first duration.


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