The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Dec. 22, 2023
Applicant:

Agc Inc., Tokyo, JP;

Inventors:

Daijiro Akagi, Tokyo, JP;

Shunya Taki, Fukushima, JP;

Takuma Kato, Tokyo, JP;

Ichiro Ishikawa, Tokyo, JP;

Kenichi Sasaki, Tokyo, JP;

Assignee:

AGC Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/32 (2012.01); G03F 1/48 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/32 (2013.01); G03F 1/48 (2013.01); G03F 1/80 (2013.01);
Abstract

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3dor a peak of 4fof the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.


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