The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
May. 04, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Amit Mishra, Tempe, AZ (US);
Bhushan Zope, Phoenix, AZ (US);
Shankar Swaminathan, Phoenix, AZ (US);
Theodorus G. M. Oosterlaken, Oudewater, NL;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4408 (2013.01); C23C 16/06 (2013.01); C23C 16/4405 (2013.01); C23C 16/45536 (2013.01); C23C 16/52 (2013.01); H01J 37/32862 (2013.01);
Abstract
An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.