The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Apr. 06, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hui-Lin Wang, Taipei, TW;
Ying-Cheng Liu, Tainan, TW;
Yi-An Shih, Changhua County, TW;
Yi-Hui Lee, Taipei, TW;
Chen-Yi Weng, New Taipei, TW;
Chin-Yang Hsieh, Tainan, TW;
I-Ming Tseng, Kaohsiung, TW;
Jing-Yin Jhang, Tainan, TW;
Yu-Ping Wang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/22 (2023.02); H10N 50/85 (2023.02); H10N 50/01 (2023.02);
Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.