The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Jul. 28, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Haitao Liu, Boise, ID (US);

Kamal M. Karda, Boise, ID (US);

Albert Fayrushin, Boise, ID (US);

Yingda Dong, Los Altos, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H01L 29/42328 (2013.01); H01L 29/42344 (2013.01); H10B 41/27 (2023.02);
Abstract

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell included in a memory cell string; the memory cell including charge storage structure and channel structure separated from the charge storage structure by a dielectric structure; a first control gate associated with the memory cell and located on a first side of the charge storage structure and a first side of the channel structure; and a second control gate associated with the memory cell and electrically separated from the first control gate, the second control gate located on a second side of the charge storage structure and a second side of the channel structure.


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