The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Jan. 21, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chao-Ching Cheng, Hsinchu, TW;
Wei-Sheng Yun, Taipei, TW;
Shao-Ming Yu, Zhubei, TW;
Tsung-Lin Lee, Hsinchu, TW;
Chih-Chieh Yeh, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 21/762 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); B82Y 10/00 (2013.01); H01L 21/76205 (2013.01); H01L 21/8221 (2013.01); H01L 21/823431 (2013.01); H01L 27/0688 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H01L 29/42356 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01); H01L 29/165 (2013.01);
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a plurality of nanostructures over a substrate, and a gate electrode surrounding the nanostructures. The semiconductor device structure includes a source/drain portion adjacent to the gate electrode, and a semiconductor layer between the gate electrode and the source/drain portion.