The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Dec. 12, 2022
Ememory Technology Inc., Hsin-chu, TW;
Chia-Jung Hsu, Hsinchu County, TW;
Wein-Town Sun, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsinchu, TW;
Abstract
A memory cell of a charge-trapping non-volatile memory includes a semiconductor substrate, a well region, a first doped region, a second doped region, a gate structure, a protecting layer, a charge trapping layer, a dielectric layer, a first conducting line and a second conducting line. The first doped region and the second doped region are formed under a surface of the well region. The gate structure is formed over the surface of the well region. The protecting layer formed on the surface of the well region. The charge trapping layer covers the surface of the well region, the gate structure and the protecting layer. The dielectric layer covers the charge trapping layer. The first conducting line is connected with the first doped region. The second conducting line is connected with the second doped region.