The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Jan. 24, 2022
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventor:

Wufeng Deng, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 21/7682 (2013.01); H01L 29/401 (2013.01); H01L 21/76897 (2013.01);
Abstract

A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate; gate structures and source/drain plugs over the base substrate; source/drain contact structures on the source/drain plugs; gate contact structures on the gate structures; and a dielectric layer on the gate structures and the source/drain plugs. Cavities are formed between the gate structures and the source/drain plugs along a surface of the base substrate. The dielectric layer encloses tops of the cavities.


Find Patent Forward Citations

Deng, Wufeng. (2025). Semiconductor structure and fabrication method thereof (U.S. Patent No. 12199155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12199155

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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