The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Sep. 22, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Ruei Jhan, Hsinchu, TW;
Kuan-Ting Pan, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu, TW;
Kuan-Lun Cheng, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate laterally offset from the first semiconductor channel. A first gate structure and a second gate structure are over and laterally surround the first and second semiconductor channels, respectively. A first inactive fin is between the first gate structure and the second gate structure. A dielectric feature over the inactive fin includes multiple layers of dielectric material formed through alternating deposition and etching steps.