The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Jul. 31, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Li-Chun Tien, Hsinchu, TW;

Shun Li Chen, Hsinchu, TW;

Ting-Wei Chiang, Hsinchu, TW;

Ting Yu Chen, Hsinchu, TW;

XinYong Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); G06F 30/30 (2020.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); G06F 30/398 (2020.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); G06F 30/30 (2020.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); G06F 30/398 (2020.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/11807 (2013.01);
Abstract

A method of manufacturing an ECO base cell includes forming first and second active areas on opposite sides of, and having corresponding long axes arranged parallel to, a first axis of symmetry; forming non-overlapping first, second and third conductive structures having long axes in a second direction perpendicular to the first direction and parallel to a second axis of symmetry, each of the first, second and third conductive structures to correspondingly overlap the first and second active areas, the first conductive structure being between the second and third conductive structures; removing material from central regions of the second and third conductive structures; and forming a fourth conductive structure being over the central regions of the second and third conductive structures and occupying an area which substantially overlaps a first segment of the first conductive structure and a first segment of one of the second and third conductive structures.


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