The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Aug. 16, 2022
Applicant:

Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;

Inventors:

Shouhei Kitajima, Kanagawa, JP;

Ryo Kasai, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/04 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/0495 (2013.01); H01L 21/3081 (2013.01); H01L 21/76805 (2013.01); H01L 21/76871 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a semiconductor layer on an upper surface of a substrate, forming an etching stopper on an upper surface of the semiconductor layer, forming a metal mask including a seed film and a plating film on a lower surface of the substrate, the metal mas having an opening inside the etching stopper in plan view, forming a through-hole in the substrate and the semiconductor layer from the lower surface of the substrate to the etching stopper through the opening, and removing the plating film by an anodic reaction in an electrolyte solution after forming the through-hole.


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