The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Mar. 09, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Qiwei Liang, Fremont, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Adib Khan, Cupertino, CA (US);

Venkata Ravishankar Kasibhotla, Bangalore, IN;

Sultan Malik, Sacramento, CA (US);

Sean S. Kang, San Ramon, CA (US);

Keith Tatseun Wong, Los Gatos, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 16/52 (2006.01); H01L 21/324 (2006.01); H01L 21/687 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67196 (2013.01); C23C 16/52 (2013.01); H01L 21/324 (2013.01); H01L 21/67017 (2013.01); H01L 21/67098 (2013.01); H01L 21/67126 (2013.01); H01L 21/67167 (2013.01); H01L 21/6719 (2013.01); H01L 21/67201 (2013.01); H01L 21/68742 (2013.01); H01L 21/76841 (2013.01); H01L 21/67103 (2013.01);
Abstract

A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.


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