The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Apr. 26, 2024
Applicant:

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Hak Sung Kim, Seoul, KR;

Dong Woon Park, Seoul, KR;

Heon Su Kim, Seoul, KR;

Sang Ii Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/244 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/244 (2013.01); H01J 37/32458 (2013.01); H01J 37/32917 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/24578 (2013.01);
Abstract

A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.


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