The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Apr. 24, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Jing-Huei Huang, Yilan County, TW;

Ya-Wen Chiu, Tainan, TW;

Lun-Kuang Tan, Hsinshu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01J 37/305 (2006.01); H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); H01J 37/3056 (2013.01); H01J 37/317 (2013.01); H01L 21/26586 (2013.01); H01L 21/266 (2013.01);
Abstract

A method includes forming a resist pattern over a structure, the resist pattern having a trench surrounded by first resist walls extending lengthwise along a first direction and second resist walls extending lengthwise along a second direction perpendicular to the first direction. The method includes loading the structure and the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction of the ion implanter. The method includes tilting the structure and the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method includes first rotating the structure and the resist pattern around the axis to a first position. The method includes first implanting ions into the resist pattern with the structure and the resist pattern at the first position.


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