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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12197128 B1

PDFFull Text
Date of Patent:
Jan. 14, 2025

Filed:

Jun. 16, 2022

Photoresist and method

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Liang-Yi Chang, Hsinchu, TW;

Tai-Chun Huang, Hsinchu, TW;

Chi On Chui, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Binh X Tran

Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); G03F 7/16 (2013.01); G03F 7/2004 (2013.01); G03F 7/26 (2013.01); H01L 21/0274 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01);
Abstract

Multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.

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